論文著作
01.
2014/5 Yu-An Chen, Cheng-Huang Kuo*, Li-Chuan Chang and Ji-Pu Wu , “Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template”, Int. J. Photoenergy, Volume 2014 .
02.
2014/5 Li-Chuan Chang, Yu-An Chen and Cheng-Huang Kuo*, “ Spatial Correlation between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High Aspect Ratio Patterned Sapphire Substrate with Sputtered AlN Nucleation Layer”, IEEE Trans. Electron Devices, VOL. 61, NO. 7, pp.2443-2447, JULY 2014
03.
2014/4 Cheng-Huang Kuo, Yi-Keng Fu, Li-Chuan Chang, and Yu-An Chen,“Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells”, IEEE J. Quant. Electron. ,vol.50 ,No.4, pp.255-259, April 2014
04.
2014/3 P. H. Chen, Cheng-Huang Kuo*, W. C. Lai, Yu-An Chen, L. C. Chang, and S. J. Chang, “GaN-Based Light-Emitting-Diode With a p-InGaN Layer ”, IEEE J. Disp. Technol., Vol.10 ,No 3, pp. 204-207, March 2014
05.
2014/3 Cheng-Huang Kuo*, Yu-An Chen, Ji-Pu Wu, and Li-Chuan Chang, “Efficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Deposition”, IEEE J. Quant. Electron. ,vol.50 ,No.3, pp.129-132, March 2014
06.
2012/4 Cheng-Huang Kuo*, Li-Chuan Chang, and Hsiu-Mei Chou, “Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template”, IEEE Photon. Technol. Lett., vol. 24, No. 7, pp.608-610, April 2012
07.
2011/10 Cheng-Huang Kuo*, Li-Chuan Chang, and Hsiu-Mei Chou, “Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template”, J. Electrochem. Soc., vol. 158, issue 610pp. H961-964, Oct. 2011
08.
2011/4 C. C. Yang, J. K. Sheu*, C. H. Kuo, M. S. Huang, S. J. Tu, F. W. Huang, M. L. Lee, Yu-Hsiang Yeh, X. W. Liang, and W. C. Lai, “Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates”, IEEE Electron Device Lett., vol . 32, no. 4, pp.536-538, April 2011
09.
2011/4 C. C. Huang, S. J. Chang*, C. H. Kuo, C. H. Wu, C. H. Ko, Clement H. Wann, Y. C. Cheng and W. J. Lin, “Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate”, J. Electrochem. Soc., vol. 158, issue 6, pp. H626-H629, April 2011
10.
2011/2 Li-Chuan Chang, Cheng-Huang Kuo*, and Chi-Wen Kuo, “Output Power Enhancements of Nitride-Based Light-Emitting Diodes with Inverted Pyramid Sidewalls Structure”, Solid-State Electron. , vol. 56, pp. 8-12, February 2011
11.
2011/1 I-Chen Chen*, Yi-Dar Chen, Chih-Chien Hsieh, Cheng-Huang Kuo, and Li-Chuan Chang, “Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN”, J. Electrochem. Soc., vol. 158, issue 3, pp. H285-H288, January 2011
12.
2010/10 S. J. Chang, Member, IEEE, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, and B. R. Huang, “Schottky Barrier Photodetectors”, IEEE Photon. Technol. Lett., vol. 10, No. 10, pp.1609-1612, October, 2010 .
13.
2010/3 C. H. Kuo*, Y. K. Fu, G. C. Chi, and S. J. Chang, Member, IEEE, “Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step”, IEEE Journal of Quantum Electronics, Vol. 46, No. 3, March 2010.
14.
2010 Y. J. Chen, C. H. Kuo, C. J. Tun, S. C. Hsu, Y. J. Cheng, and C. Y. Liu, “Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate”, Jpn. J. Appl. Phys. Lett., Vol. 49, pp.020201, 2010.
15.
2010/5 S. J. Chang, Member, IEEE, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, and T. P. Chen, “GaN Metal–Semiconductor–Metal Photodetectors Prepared on Nanorod Template”, IEEE Photon. Technol. Lett., vol. 22, No. 9, pp.625-627, May 1, 2010 .
16.
2010 C. H. Kuo*, L. C. Chang, C. W. Kuo, and C. J. Tun, “Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template”, IEEE Photon. Technol. Lett., vol. 21, No. 4, pp.257-259, 2010 .
17.
2010/1 P. H. Chen, W. C. Lai, Li-Chi Peng, C. H. Kuo, Chi-Li Yeh, J. K. Sheu, and C. J. Tun, “GaN-Based LEDs With AZO:Y Upper Contact”, IEEE Tran. Electro. Dev., vol. 57, No. 1, pp.134-139, January, 2010 .
18.
2010/2 C.W. Chen, C.J. Pan, F.C. Tsao, Y.L. Liu, C.W. Kuo, C.H. Kuo, G.C. Chi, P.H. Chen,W.C. Lai, T.H. Hsueh, C.J. Tun, C.Y. Chang, S.J. Pearton, F. Ren, “Catalyst-free ZnO nanowires grown on a-plane GaN”, Vacuum, Vol. 84, issue 6, pp. 803-806, February 2010.
19.
2010 K.H. Lee, P.C. Chang, S.J. Chang, Y.K. Su, Y.C. Wang, C.L. Yu, C. H. Kuo , “Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers”, Thin Solid Films, vol. 518, pp. 2839–2842, 2010.
20.
2010 Y. K. Fu, C. H. Kuo*, C. J. Tun, and L. C. Chang , “Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers ”, Solid-State Electronics, vol.54, pp.590–594, 2010.
21.
2009/11 C. H. Kuo*, L. C. Chang, C. W. Kuo, and G. C. Chi, “GaN-Based Light-Emitting Diode Prepared on Nano-Inverted Pyramid GaN Template”, IEEE Photon. Technol. Lett., vol. 21, No 21, pp.1645-1647, November 1, 2009.
22.
2009 C. H. Kuo*, L. C. Chang, C. W. Kuo, and C. J. Tun, “Improvement of the Efficiency of Nitride-Based Light Emitting Diodes on Nanoinverted Pyramid GaN Templates”, J. Electrochem. Soc., vol. 156, issue 12, pp. H986-H989, 2009.
23.
2009 W. C. Lai, P. H. Chen, L. C. Chang, C. H. Kuo, J. K. Sheu, C. J. Tun, and S. C. Shei, “GaN-based LEDs with mesh ITO p-contact and nano-pillars”, IEEE Photon. Technol. Lett., vol. 21, issue 18, pp.1293-1295, 2009 .
24.
2009 C. H. Kuo＊, Y. K. Fu, G. C. Chi, and S. J. Chang, “Efficiency dependence on degree of localization states in GaN-based asymmetric two-step light-emitting-diode with a low indium content InGaN shallow step”, IEEE Journal of Quantum Electronics, vol. 46, issue 3, pp. 391-395, 2009.
25.
2009/7 C. J. Tun, C. H. Kuo, Y. K. Fu, C. W. Kuo, Mitch M. C. Chou, and G. C. Chi, “Growth and characterization of c-plane AlGaN on γ-LiAlO2”, J. Cryst. Growth, vol. 311, issue 14, pp. 3726-3730, July 2009.
26.
2009 C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tasi, M. L. Wu, G. C. Chi, and C. H. Kuo*, ”Optical simulation and fabrication of nitride-based light-emitting diodes with inverted pyramid sidewalls”, Journal of Selected Topics in Quantum Electronic, vol. 15, issue 4, pp. 1264-1268, 2009.
27.
2009 J.-W. Shi, Shi-Hao Guol, C.-S. Lin, J.-K. Sheu, K. H. Chang, W.-C. Lai, C.-H. Kuo, C.-J. Tun, and J.-I. Chyi, “The Structure of GaN-Based Transverse Junction Blue Light-Emitting Diode Array for Uniform Distribution of Injected Current/Carriers”, Journal of Selected Topics in Quantum Electronic, vol. 15, issue 4, pp. 1292-1297, 2009.
28.
2009 Y. K. Fu, C. J. Tun, C. W. Kuo, C. H. Kuo*, C. J. Pan, G. C. Chi, M. C. Chen, H. F. Hong, S. M. Lan, “The effect of absorption layer of different arrangement quantum well on optoelectronic characteristics of nitride-based photovoltaic cells grown by MOCVD”, Phys. Stat. Sol. (c), vol. 6, no. S2, pp. S873-S875, 2009.
29.
2009/3 C. H. Kuo*, Y. K. Fu, C. L. Yeh, C. J. Tun, P. H. Chen, W. C. Lai, and S. J. Chang, “Nitride-based asymmetric two-step light-emitting diode with In0.08Ga0.92N shallow step”, IEEE Photon. Technol. Lett., Vol. 21, no. 6, pp. 371-373, March 2009.
30.
2009/3 J. Y. Chen, C. J. Pan, F. C. Tsao, C. H. Kuo, G. C. Chi, B. J. Pong, C. Y. Chang, D. P. Norton, and S. J. Pearton, “Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst”, Vacuum, Vol. 83, issue 7, pp. 1076-1079, March 2009.
31.
2009/2 C. H. Chan, C. H. Hou, C. K. Huang, T. J. Chen, S. Z. Tseng, H. T. Chien, C. H. Kuo, K. H. Hsieh, Y. L. Tsai, K. C. Hsu, and C. C. Chen, “Patterning periodical motif on substrates using monolayer of microspheres: Application in GaN light-emitting diodes”, Jpn. J. Appl. Phys. Lett., Vol. 48, issue 2, pp.020212, February 2009.
32.
2009/2 S. H. Guo, H. W. Huang, C. S. Lin, C. J. Tun, C. H. Kuo, J. W. Shi, “Array of GaN-based Transerve-Junction Blue Light Emitting Diodes with Regrown n-Type Regimes”, Proc. SPIE, Vol. 7216, pp.721629, February 2009.
33.
2009/1 C. W. Kuo, Y. K. Fu, C. H. Kuo*, L. C. Chang, C. J. Tun, C. J. Pan, and G. C. Chi, “Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition”, J. Cryst. Growth, Vol. 311, issue 2, pp.249-253, January 2009.
34.
2009/2 S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. H. Kuo, and S. L. Wu, “AlGaN/GaN schottky barrier photodetector with multi-MgxNy/GaN buffer”, IEEE Sensors Journal, Vol. 9, issue 1-2, pp.87-92, January- February 2009.
35.
2008/7 C. H. Kuo﹡, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu and G. C. Chi, “Low Operation Voltage of Nitrite-Based LEDs with Al-doped ZnO Transparent Contact Layer”, Electrochemical and Solid-State Lett., Vol. 11, No. 9, pp. H269-271, July 2008.
36.
2008/7 Y. K. Fu, C. H. Kuo﹡, C. J. Tun, C. W. Kuo, W. C. Lai, G. C. Chi, C. J. Pan, M. C. Chen, H. F. Hong and S. M. Lan, “Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition”, J. Cryst. Growth, 310, pp.4456-4459, July 2008.
37.
2008/3 C. W. Kuo, C. M. Chen, H. C. Feng and C. H. Kuo﹡, “Reliable nitride-based light-emitting diodes with meshed p-GaN”, phys. stat. sol. (c) 5, No. 6, pp. 2080–2082, March 12, 2008.
38.
2008/3 Y. K. Fu, C. J. Tun and C. H. Kuo﹡, “Dislocation annihilateion in GaN with multiple MgxNy/GaN buffer layers by metalorganic chemical vapor deposition”, phys. stat. sol. (c) 5, No. 6, pp. 1499–1501, March 25, 2008.
39.
2008 F. C. Tsao, Y. Y. Chen, C. H. Kuo, G. C. Chi, C. J. Pan, P. J. Huang, C. J. Tun, B. J. Pong, T. H. Hsueh, C. Y. Chang, S. J. Pearton and F. Ren, “Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)”, Appl. Phys. Lett., 92 203110, 2008.
40.
2008/10 S. J. Chang, K. H. Lee, P. C. Chang, Y.C. Wang, C. L. Yu, C. H. Kuo, S. L. Wu, “GaN-based schottky barrier photodetectors with a 12-pairs MgxNy/GaN buffer layer”, IEEE Quantum Electronicvs, Vol. 44, No. 10, pp. 916, October 2008.
41.
2008 K. H. Lee, S. J. Chang, P. C. Chang, Y.C. Wang, C. H. Kuo, “AlGaN/GaN schottky barrier photodetectors with multi- MgxNy/GaN buffer layer“, J. Electron. Mater., 155, 10, H 716-H719, 2008.
42.
2008 K. H. Lee, S. J. Chang, P. C. Chang, Y.C. Wang, C. H. Kuo, “High quality GaN-based schottky diodes“, Appl. Phys. Lett., 93, 132110, 2008.
43.
2008/3 J. W. Shi, C. C. Chen, C. K. Wang, C. S. Lin, J. K. Sheu, W. C. Lai, C. H. Kuo, C. J. Tun, T. H. Yang,F. C. Tsao, and J. I. Chyi, “Phosphor-Free GaN-based transverse junction white-light light-emitting diodes with regrown n-Type regions“, IEEE Photon. Technol. Lett., Vol. 20, no. 6, March 2008.
44.
2008/8 W. C. Lai, J. K.Shue, Y. K. Fu, C. H. Kuo, C. W. Kuo, C. J. Tun, C. J. Pan and G.. C. Chi, “Four-wavelengths-mixed white light-emitting diodes with dual-wavelength-pumped green and red phosphors“, Jpn. J. Appl. Phys. Lett., Vol. 47, No. 8, pp. 6317–6319, August 2008.
45.
2008/8 M. L. Wu, Y. C. Lee, P. S. Lee, C. H. Kuo, and J. Y. Chnag, “III-Nitride based microarray light-emitting diodes with enhance light extraction efficiency“, Jpn. J. Appl. Phys. Lett., Vol. 47, No. 8, pp. 6757–6759, August 2008.
46.
2008/4 W. C. Lai, Y. S. Huang, Y. W. Yen, J. K. Sheu, T. H. Hsueh, C. H. Kuo and S. J. Chang, “The CL emission observation of InGaN/ GaN MQW V shaped pits with different superlattices underlayer“, phys. stat. sol. (c) 5, No. 6, pp. 1639–1641, April 10, 2008.
47.
2007/12 C. H. Kuo*, and H. C. Feng, , " Nitride-based near-ultraviolet Mesh MQW light-emitting diodes ", IEEE Photon. Technol. Lett. Vol. 19, No. 23, pp. 1901-1903, December 2007.
48.
2007/6 C. H. Kuo* and S. J. Chang and H. Kuan "GaN-based indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts ", IET Optoelectron., Vol.1, No.3, June, pp.110-112, 2007.
49.
2007 J. K. Sheu, Y. S. Lu, M. L. Lee, W. C. Lai, C. H. Kuo, and C. J. Tun, " Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer ", Appl. Phys. Lett., 90 264511, 2007.
50.
2007 C. J. Tun , C. H. Kuo*, , Y. K. Fu, C. W. Kuo, , C. J. Pan and G. C. Chi, " Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metalorganic chemical vapor deposition ", Appl. Phys. Lett., 90 212109, 2007.
51.
2007 C. H. Kuo*, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu, and G. C. Chi, " Nitride-based near-ultraviolet light-emitting diodes with meshed p-GaN ", Appl. Phys. Lett., 90 142115, 2007.
52.
2007 C. W. Kuo, C. M. Chen, C. H. Kuo*, and G. C. Chi, "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures", Proc. of SPIE, Vol. 6473 64730U-2, 2007.
53.
2006/2 W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu and C. F. Shen, "Rapid thermal annealed InGaN/GaN flip-chip LEDs", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp. 32-37, January 2006.
54.
2006 C. H. Kuo*, C. W. Kuo, C. M. Chen, B. J. Pong and G. C. Chi, "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures", Appl. Phys. Lett., 89 191112, 2006.
55.
2006 C. H. Kuo*, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, and G. C. Chi, "Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers", Appl. Phys. Lett., 89 201104, 2006.
56.
2006/4 S. C. Shei, J. K. Sheu, C. M. Tsai, W. C. Lai, M. L. Lee, and C. H. Kuo, "Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes", Jpn. J. Appl. Phys. Lett., Vol. 45, No. 4A, pp. 2463–2466, April 2006.
57.
2006/6 C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su, "High Efficiency and Improved ESD Characteristics f GaN-Based LEDs With Naturally Textured Surface Grown by MOCVD", IEEE Photon. Technol. Lett. Vol. 18, No. 11, June 1, 2006.
58.
2006/3 C. H. Kuo*, S. J. Chang, G. C. Chi, K. T. Lam, and Y. S. Sun, "Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers", phys. stat. sol. (c) 3, No. 6, pp. 2153–2155, May 12, 2006.
59.
2006 B. J. Pong, C. H. Chen, S. H. Yen, J. F. Hsu, C. J. Tun, Y. K. Kuo, C. H. Kuo, G. C. Chi, "Abnormal blue shift of InGaN micro-size light emitting diodes", Solid-State Electronics, 50 pp. 1588-1594, 2006.
60.
2005/4 C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. H. Kuo, C. S. Chang, T. K. Lin, T. K. Ko and J. J. Tang, "Noise characteristics of AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure field effect transistors with photochemical vapor deposition SiO2 layer", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2458-2461, April 2005.
61.
2005/10 C. H. Kuo*, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai and P. T. Wang, " Nitride-based light emitting diodes with p-AlInGaN surface layers", IEEE Trans. Electron Devices, Vol. 52, No. 10 , pp. 2346-2349, October 2005.
62.
2005 C. H. Kuo* and S. J. Chang and S.C. Chen "Nitride-based light emitting diodes with Nanostructured silicon contact layer", Journal of Crystal Growth, 285, pp.295-299, 2005.
63.
2005/3 Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, "ICP etching of sapphire substrates", J. Optical Mater., Vol. 27,No. 6, pp. 1171-1174, March 2005.
64.
2005 W. S. Chen, S. J. Chang, Y. K. Su, R. L. Wang, C. H. Kuo, S. C. Shei, “AlxGa1xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier”, Journal of Crystal Growth, vol. 275 , pp.398–403, 2005.
65.
2004 C. H. Kuo, S. J Chang, Y. K. Su, R. W. Chuang, C. S. Chang, L. W. Wu, W. C. Lai,, J. F. Chen, J. K. Sheu, H. M. Lo and J. M. Tsai , ‘’Nitride-based near-ultraviolet LEDs with an ITO transparent contact’’, Materials Science and Engineering B 106, pp. 69-72, 2004.
66.
2004/2 Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, "Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs", JOURNAL OF CRYSTAL GROWTH 261 (4): 466-470 FEB 1 2004.
67.
2004/9 C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko, and J. J. Tang, "GaN MSM photodetectors with TiW transparent electrodes", Mater. Sci. Eng. B, Vol. 112, No. 1, pp. 25-29, September 2004.
68.
2004/8 C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C. C. Lin, "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers", Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp. 214-217, August 2004.
69.
2004/4 S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke and J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact", IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp. 1002-1004, April 2004.
70.
2003 C. H. Kuo, S. J Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai and S. C. Chen,‘’Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers’’, JEM, Vol. 32, No. 5 , pp. 415, 2003.
71.
2003/2 C. H. Kuo, S. J. Chang, Y. K. Su, J.F. Chen, J. K. Sheu, J. M. Tsai,” Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer”, IEEE Trans. Electron Devices, Vol. 50, No. 2 , pp. 535-537, February 2003.
72.
2003 C. H. Kuo, S. J. Chang, Y. K. Su, C. K. Wang, L. W. Wu, J. K. Sheu, T. C. Wen, J. M. Tsai, W. C. Lai and C. C. Lin” Nitride-based blue LEDs withGaN/SiN double buffer layers”, Solid-State Electronics, vol. 47, pp.2019-2022, 2003.
73.
2003/4 C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, and J. M. Tsai, ” GaN-based Light-emitting Diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer” , Jpn. J. Appl. Phys. Lett., Vol. 42, No. 4B, pp. 2270-2272, April 2003.
74.
2003/4 C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai and R. K. Wu, “n-UV+Blue/Green/Red White Light Emitting Diode Lamps”, Jpn. J. Appl. Phys. Lett., Vol. 42, No. 4B, pp. 2284-2287, April 2003.
75.
2003 L.W. Wu, S.J. Chang a, Y.K. Su, R.W. Chuang, Y.P. Hsu, C.H. Kuo, W.C. Lai, T.C. Wen a, J.M. Tsai, J.K. Sheu,” In0:23Ga0:77N/GaN MQW LEDs with a low temperature GaN cap layer”, Solid-State Electronics, vol. 47, pp.2027-2030, 2003.
76.
2003/2 L. W. Wu, S. J. Chang, Y K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen and J. M. Tsai, " Si and Zn co-doped InGaN-GaN white light-emitting diodes ", IEEE Electron. Dev. Lett., Vol. 50, No. 2 , pp. 519-521, February 2003.
77.
2003 T. C. Wen, S. J Chang, Y. K. Su, L. W. Wu,, C. H. Kuo, W. C. Lai, J. K. Sheu and J. M. Tsai ,‘’InGaN/GaN Multiple Quantum Well Green Light-Emitting Diodes Prepared by Temperature Ramping’’, JEM, Vol. 32, No. 5 , pp. 419, 2003.
78.
2003 Y.P. Hsu, S.J. Chang, Y.K. Su, C.S. Chang, S.C. Shei, Y.C. Lin, C.H. Kuo, L.W.Wu, and S.C. Chen, ‘’InGaN/GaN Light-Emitting Diodes with a Reflector at the Backside of Sapphire Substrates, JEM, Vol. 32, No. 5 , pp. 403, 2003.
79.
2003/12 C. K. Wang, T. K. Lin, Y. Z. Chiou, S. J. Chang, Y. K. Su, C. H. Kuo and T. K. Ko, "High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide", SEMICONDUCTOR SCIENCE AND TECHNOLOGY 18 (12): 1033-1036 DEC 2003
80.
2003/2 J. K. Sheu, S. J. Chang, C. H. Kuo, Y K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai, R. K. Wu and G. C. Chi, "White light emission from near UV InGaN/GaN LED chip precoated with blue/green/red phosphors", IEEE Photon. Technol. Lett., Vol. 15, No. 1, pp. 18-20, January 2003.
81.
2003/11 C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, C. M. Tsai, H. M. Lo, J. C. Ke and J. K. Sheu, "High brightness InGaN LEDs with an ITO on n++-SPS upper contact", IEEE Tran. Electron. Dev., Vol. 50, No. 11, pp. 2208-2212, November 2003.
82.
2003/2 S. J. Chang, L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen and J. M. Tsai, "Si and Zn co-doped InGaN/GaN white light emitting diodes", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 519-521, February 2003.
83.
2003/8 L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai and J. K. Sheu, "Nitride-based green light emitting diodes with high temperature GaN barrier layers", IEEE Tran. Electron. Dev., Vol. 50, No. 8, pp. 1766-1770, August 2003.
84.
2003/11 L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai and J. K. Sheu, "In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer", Solid State Electron., Vol. 47, No. 11, pp. 2027-2030, November 2003.
85.
2003/2 S. J. Chang, L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen and J. M. Tsai, "Si and Zn co-doped InGaN/GaN white light emitting diodes", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 519-521, February 2003.
86.
2002/2 C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi, "Low temperature activation of Mg-doped GaN in O2 ambient", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 2A, pp. L112-L114, February 2002.
87.
2002/5 C. H. Kuo, S. J. Chang, Y K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi, "InGaN/GaN light emitting diodes activated in O2 ambient", IEEE Electron. Dev. Lett., Vol. 23, No. 5 , pp. 240-242, May 2002.
88.
2002/8 S. J Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, ‘’ 400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes’’, IEEE JSTQE, Vol. 8, No. 4 , pp. 744-748, July/August 2002.
89.
2002/6 T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu and J. F. Chen, "InGaN/GaN tunnel injection blue light emitting diodes", IEEE Tran. Electron. Dev., Vol. 49, No. 6, pp. 1093-1095, June 2002.
90.
2002/5 L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen and J. K. Sheu, "Influence of Si-doping on the characteristics of InGaN/GaN multiple quantum well blue light emitting diodes", IEEE J. Quantum. Electron., Vol. 38, No. 5, pp. 446-450, May 2002.
91.
2002/4 C. H. Chen, S. J. Chang, Y. K. Su, J. F. Chen, C. H. Kuo, and Y. C. Lin, "Nitride-Based cascade near white light-emitting diodes", IEEE Photon. Technol. Lett., Vol. 14, No. 7, pp. 908-910, April 2002.
92.
2002/4 J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang and Y. K. Su, "White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn codoped active layer", IEEE Photon. Technol. Lett., Vol. 14, No. 4, pp. 450-452, April 2002.
93.
2001 C. H. Kuo, J. K. Sheu, G. C. Chi, Y. L. Huang , and T.W. Yeh, ”Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices”, Solid-State Electronics, vol. 45, pp.717-720, 2001.
94.
2001 J. K. Sheu, C. H. Kuo, G. C. Chi, C. C. Chen and M. J. Jou,” Characterization of the Properties of Mg-doped Al0.15Ga0.85N/GaN superlattices”, Solid-State Electronics, vol. 45, pp.1665-1671, 2001.
95.
2000 G. C. Chi, C. H. Kuo, J. K. Sheu, C.J. Pan “The doping process of p-type GaN films” Materials Science & Engineering B 75, pp.210-213, 2000.
English
